Home / Products / Components / SiC MOSFET
| Place of Origin: | Shanghai |
| Brand Name: | Inventchip Technology |
| Model Number: | IV2Q12040T4Z |
| Certification: | AEC-Q101 |
Features
2ndGeneration SiC MOSFET Technology with
+15~+18V gate drive
High blocking voltage with low on-resistance
High speed switching with low capacitance
175°C operating junction temperature capability
Ultra fast and robust intrinsic body diode
Kelvin gate input easing driver circuit design
AEC-Q101 qualified
Applications
EV chargers and OBCs
Solar boosters
Automotive compressor inverters
AC/DC power supplies
Outline:
Marking Diagram:
Absolute Maximum Ratings(TC=25°C unless otherwise specified)
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VDS | Drain-Source voltage | 1200 | V | VGS =0V, ID =100μA | |
| VGSmax (Transient) | Maximum transient voltage | -10 to 23 | V | Duty cycle<1%, and pulse width<200ns | |
| VGSon | Recommended turn-on voltage | 15 to 18 | V | ||
| VGSoff | Recommended turn-off voltage | -5 to -2 | V | Typical -3.5V | |
| ID | Drain current (continuous) | 65 | A | VGS =18V, TC =25°C | Fig. 23 |
| 48 | A | VGS =18V, TC =100°C | |||
| IDM | Drain current (pulsed) | 162 | A | Pulse width limited by SOA and dynamic Rθ(J-C) | Fig. 25, 26 |
| ISM | Body diode current (pulsed) | 162 | A | Pulse width limited by SOA and dynamic Rθ(J-C) | Fig. 25, 26 |
| PTOT | Total power dissipation | 375 | W | TC =25°C | Fig. 24 |
| Tstg | Storage temperature range | -55 to 175 | °C | ||
| TJ | Operating junctiontemperature | -55 to 175 | °C | ||
| TL | Solder Temperature | 260 | °C | wave soldering only allowed at leads, 1.6mm from case for 10 s |
Thermal Data
| Symbol | Parameter | Value | Unit | Note |
| Rθ(J-C) | Thermal Resistance from Junction to Case | 0.4 | °C/W | Fig. 25 |
Electrical Characteristics (TC =25。C unless otherwise specified)
| Symbol | Parameter | Value | Unit | Test Conditions | Note | ||
| Min. | Typ. | Max. | |||||
| IDSS | Zero gate voltage drain current | 5 | 100 | μA | VDS =1200V, VGS =0V | ||
| IGSS | Gate leakage current | ±100 | nA | VDS =0V, VGS = -5~20V | |||
| VTH | Gate threshold voltage | 1.8 | 2.8 | 4.5 | V | VGS =VDS , ID =9mA | Fig. 8, 9 |
| 2.1 | VGS =VDS , ID =9mA @ TJ =175。C | ||||||
| RON | Static drain-source on - resistance | 40 | 52 | mΩ | VGS =18V, ID =20A @TJ =25。C | Fig. 4, 5, 6, 7 | |
| 75 | mΩ | VGS =18V, ID =20A @TJ =175。C | |||||
| 50 | 65 | mΩ | VGS =15V, ID =20A @TJ =25。C | ||||
| 80 | mΩ | VGS =15V, ID =20A @TJ =175。C | |||||
| Ciss | Input capacitance | 2160 | pF | VDS=800V, VGS =0V, f=1MHz, VAC=25mV | Fig. 16 | ||
| Coss | Output capacitance | 100 | pF | ||||
| Crss | Reverse transfer capacitance | 5.8 | pF | ||||
| Eoss | Coss stored energy | 40 | μJ | Fig. 17 | |||
| Qg | Total gate charge | 110 | nC | VDS =800V, ID =30A, VGS =-3 to 18V | Fig. 18 | ||
| Qgs | Gate-source charge | 25 | nC | ||||
| Qgd | Gate-drain charge | 59 | nC | ||||
| Rg | Gate input resistance | 2.1 | Ω | f=1MHz | |||
| EON | Turn-on switching energy | 446.3 | μJ | VDS =800V, ID =30A, VGS =-3.5 to 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C | Fig. 19, 20 | ||
| EOFF | Turn-off switching energy | 70.0 | μJ | ||||
| td(on) | Turn-on delay time | 9.6 | ns | ||||
| tr | Rise time | 22.1 | |||||
| td(off) | Turn-off delay time | 19.3 | |||||
| tf | Fall time | 10.5 | |||||
| EON | Turn-on switching energy | 644.4 | μJ | VDS =800V, ID =30A, VGS =-3.5 to 18V, RG(ext) =3.3Ω,L=200μH TJ =175。C | Fig. 22 | ||
| EOFF | Turn-off switching energy | 73.8 | μJ | ||||
Reverse Diode Characteristics (TC =25。C unless otherwise specified)
| Symbol | Parameter | Value | Unit | Test Conditions | Note | ||
| Min. | Typ. | Max. | |||||
| VSD | Diode forward voltage | 4.2 | V | ISD =20A, VGS =0V | Fig. 10, 11, 12 | ||
| 4.0 | V | ISD =20A, VGS =0V, TJ =175。C | |||||
| IS | Diode forward current (continuous) | 63 | A | VGS =-2V, TC =25。C | |||
| 36 | A | VGS =-2V, TC=100。C | |||||
| trr | Reverse recovery time | 42.0 | ns | VGS=-3.5V/+18V, ISD =30A, VR =800V, RG(ext) =10Ω L=200μH di/dt=3000A/μs | |||
| Qrr | Reverse recovery charge | 198.1 | nC | ||||
| IRRM | Peak reverse recovery current | 17.4 | A | ||||
Typical Performance (curves)
Package Dimensions
Note:
1. Package Reference: JEDEC TO247, Variation AD
2. All Dimensions are in mm
3. Slot Required, Notch May Be Rounded
4. Dimension D&E Do Not Include Mold Flash
5. Subject to Change Without Notice
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