1200V 160mΩ Generatio 2 Automotiva SiC MOSFET

Caracteres

Applications

Contornus:

Diagramma Notationis:

Censurae Summae Absolutae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor	Unitas	Conditiones Probationis	Nota
VDS	Tensio a Dreno ad Fontem	1200	V	VGS =0V, ID =100μA
VGSmax (DC)	Maxima tensio DC	-5 ad 20	V	Statio (DC)
VGSmax (Pulsus)	Maxima tensio spicata	-10 ad 23	V	Cyclus officii<1%, et latitudo impulsi<200ns
VGSon	Tollenda voltio commendata	18±0.5	V
VGSoff	Demissa voltio commendata	-3.5 ad -2	V
ID	Continua amperitas (continua)	19	A	VGS =18V, TC =25°C	Fig. 23
		14	A	VGS =18V, TC =100°C
IDM	Iusus (pulsatus)	47	A	Largor pulsus limitatur per SOA	Fig. 26
PTOT	Totalis dissipatio potentiae	136	W	TC = 25°C	Fig. 24
Tstg	Temperatura recondita spatium	-55 ad 175	°C
TJ	Temperatura operationis junctionis	-55 ad 175	°C
TL	Temperatura soldering	260	°C	soldering undoso tantum permittitur ad leads, 1.6mm a case pro 10 s

Data Thermica

Symbolum	Parametrum	Valor	Unitas	Nota
Rθ(J-C)	Resistentia Thermica ab Iunctura ad Cistellam	1.1	°C\/W	Fig. 25

Caracteristicae Electrificae (TC =25. C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
		Min.	Typ.	Max.
IDSS	Drain Currentus cum voltatibus nullis in porta		5	100	μA	VDS =1200V, VGS =0V
IGSS	Fluxus per gate			±100	nA	VDS =0V, VGS = -5~20V
VTH	Voltages limen gate	1.8	2.8	4.5	V	VGS =VDS , ID =2mA	Fig. 8, 9
			2.1			VGS =VDS , ID =2mA @ TJ =175. C
RON	Statis resistentia dren-sorsus on		160	208	mΩ	VGS =18V, ID =5A @TJ =25. C	Fig. 4, 5, 6, 7
			285		mΩ	VGS =18V, ID =5A @TJ =175. C
Ciss	Capacitas input		575		pF	VDS=800V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Capacitas exitus		34		pF
Crss	Capacitas translatio inversa		2.3		pF
Eoss	Energia conservata Coss		14		μJ		Fig. 17
Qg	Summa accusatio portae		29		nC	VDS =800V, ID =10A, VGS =-3 ad 18V	Fig. 18
Qgs	Facies-fontis accusatio		6.6		nC
Qgd	Facies-defluxus accusatio		14.4		nC
Rg	Resistentia input fontis		10		ω	f=1MHz
EON	Energia commutationis ad incendum		115		μJ	VDS =800V, ID =10A, VGS =-3.5 ad 18V, RG(ext) =3.3Ω, L=300μH TJ =25。C	Fig. 19, 20
EOFF	Energia commutationis ad exstinguendum		22		μJ
td(on)	Tempus morae ad incendum		2.5		nS
tr	Tempus surgens		9.5
td(off)	Tempus morae praestinatio		7.3
tF	Tempus decidendi		11.0
EON	Energia commutationis ad incendum		194		μJ	VDS =800V, ID =10A, VGS =-3.5 ad 18V, RG(ext) =3.3Ω, L=300μH TJ =175。C	Fig. 22
EOFF	Energia commutationis ad exstinguendum		19		μJ

Caracteristica Diodi Inversi (TC =25. C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
Symbolum	Parametrum	Min.	Typ.	Max.	Unitas	Conditiones Probationis	Nota
VSD	Voltium directum diodis		4.0		V	ISD =5A, VGS =0V	Fig. 10, 11, 12
VSD	Voltium directum diodis		3.7		V	ISD =5A, VGS =0V, TJ =175。C	Fig. 10, 11, 12
trr	Tempus recuperationis inversae		26		nS	VGS =-3.5V/+18V, ISD =10A, VR =800V, RG(ext) =15Ω L=300μH di/dt=3000A/μs
Qrr	Electritas recuperationis inversae		92		nC
IRRM	Summa currentis recuperationis inversae		10.6		A