1200V 30mΩ Generatio 2 Automotiva SiC MOSFET

Locus Originis:	Zhejiang
Nomen Notae:	Inventchip Technologia
Numerus Moduli:	IV2Q12030D7Z
Certificatio:	AEC-Q101 qualificationem adeptus

Caracteres

Applications

Contornus:

Diagramma Notationis:

Censurae Summae Absolutae (TC=25°C nisi aliter spec2ificatum)

Symbolum	Parametrum	Valor	Unitas	Conditiones Probationis	Nota
VDS	Tensio a Dreno ad Fontem	1200	V	VGS =0V, ID =100μA
VGSmax (DC)	Maxima tensio DC	-5 ad 20	V	Statio (DC)
VGSmax (Pulsus)	Maxima tensio spicata	-10 ad 23	V	Cyclus officii<1%, et latitudo impulsi<200ns
VGSon	Tollenda voltio commendata	18±0.5	V
VGSoff	Demissa voltio commendata	-3.5 ad -2	V
ID	Continua amperitas (continua)	79	A	VGS =18V, TC =25°C	Fig. 23
		58	A	VGS =18V, TC =100°C
IDM	Iusus (pulsatus)	198	A	Largor pulsus limitatur per SOA	Fig. 26
PTOT	Totalis dissipatio potentiae	395	W	TC = 25°C	Fig. 24
Tstg	Temperatura recondita spatium	-55 ad 175	°C
TJ	Temperatura operationis junctionis	-55 ad 175	°C
TL	Temperatura soldering	260	°C	soldering undoso tantum permittitur ad leads, 1.6mm a case pro 10 s

Data Thermica

Symbolum	Parametrum	Valor	Unitas	Nota
Rθ(J-C)	Resistentia Thermica ab Iunctura ad Cistellam	0.38	°C\/W	Fig. 23

Caracteristicae Electrificae (TC =25. C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
Symbolum	Parametrum	Min.	Typ.	Max.	Unitas	Conditiones Probationis	Nota
IDSS	Drain Currentus cum voltatibus nullis in porta		5	100	μA	VDS =1200V, VGS =0V
IGSS	Fluxus per gate			±100	nA	VDS =0V, VGS = -5~20V
VTH	Voltages limen gate	1.8	2.8	4.5	V	VGS=VDS , ID =12mA	Fig. 8, 9
VTH	Voltages limen gate		2.0			VGS=VDS , ID =12mA @ TJ =175。C	Fig. 8, 9
RON	Statis resistentia dren-sorsus on		30	39	mΩ	VGS =18V, ID =30A @TJ =25。C	Fig. 4, 5, 6, 7
			55		mΩ	VGS =18V, ID =30A @TJ =175。C
			36	47	mΩ	VGS =15V, ID =30A @TJ =25。C
			58		mΩ	VGS =15V, ID =30A @TJ =175。C
Ciss	Capacitas input		3000		pF	VDS=800V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Capacitas exitus		140		pF
Crss	Capacitas translatio inversa		7.7		pF
Eoss	Energia conservata Coss		57		μJ		Fig. 17
Qg	Summa accusatio portae		135		nC	VDS =800V, ID =40A, VGS =-3 ad 18V	Fig. 18
Qgs	Facies-fontis accusatio		36.8		nC
Qgd	Facies-defluxus accusatio		45.3		nC
Rg	Resistentia input fontis		2.3		ω	f=1MHz
EON	Energia commutationis ad incendum		856.6		μJ	VDS =800V, ID =40A, VGS =-3.5 ad 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C	Fig. 19, 20
EOFF	Energia commutationis ad exstinguendum		118.0		μJ
td(on)	Tempus morae ad incendum		15.4		nS
tr	Tempus surgens		24.6
td(off)	Tempus morae praestinatio		28.6
tF	Tempus decidendi		13.6

Caracteristica Diodi Inversi (TC =25. C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
Symbolum	Parametrum	Min.	Typ.	Max.	Unitas	Conditiones Probationis	Nota
VSD	Voltium directum diodis		4.2		V	ISD =30A, VGS =0V	Fig. 10, 11, 12
VSD	Voltium directum diodis		4.0		V	ISD =30A, VGS =0V, TJ =175. C	Fig. 10, 11, 12
trr	Tempus recuperationis inversae		54.8		nS	VGS=-3.5V/+18V, ISD =40A, VR =800V, RG(ext) =13Ω L=200μH di/dt=3000A/μs
Qrr	Electritas recuperationis inversae		470.7		nC
IRRM	Summa currentis recuperationis inversae		20.3		A