SiC SBD

1200V 10A SiC Schottky Diodes AC/DC Conversores

Introductio

Locus Originis:	Zhejiang
Nomen Notae:	Inventchip Technologia
Numerus Moduli:	IV1D12010T2
Certificatio:

Minimumpacking Quantitas:	450PCS
Pretium:
Packaging Details:
Tempus traditionis:
Termini solucionis:
Capacitas Supplicandi:

Caracteres

Temperatura Maxima Junction 175°C
Alta Capacitas Surge Current
Nullus Reverse Recovery Current
Zero Forward Recovery Voltag
Summus Frequency Operatio
comportamentum commutationis independens a temperatura
Positiva Coefficiente Temperaturae in VF

Applications

Vis Solaris Incrementum
Inversor Free Wheeling Diodes
Vindobona 3-Phasae PFC
Convertidores AC/DC
Alimenta per commutationem

Contornus

Diagramma Notationis

Censurae Summae Absolutae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor	Unitas
VRRM	Tensionis inversio (acme repetitiva)	1200	V
VDC	Tensio continens DC	1200	V
Si	Currit prorsus (continuus) @Tc=25°C	30	A
	Currit prorsus (continuus) @Tc=135°C	15.2	A
	Fluxus anteorem (continuus) @Tc=155°C	10	A
IFSM	Curriculum progressivum surgens semisinus non repetitivus @Tc=25°C tp=10ms	72	A
IFRM	Curriculum progressivum surgens repetitivum (Freq=0.1Hz, 100cycles) semisinus @Tamb =25°C tp=10ms	56	A
PTOT	Totalis dissipatio potentiae @ Tc=25°C	176	W
	Totalis dissipatio potentiae @ Tc=150°C	29
	I2t valor @Tc=25°C tp=10ms	26	A2s
Tstg	Temperatura recondita spatium	-55 ad 175	°C
TJ	Ambitus operationis temperatura junction	-55 ad 175	°C

Praegraeca superantes ea quae in tabula Cursuum Maxime enumeratae sunt possunt damnum inferre apparatu. Si quisquam ex his limitibus excesserit, functio apparatus sumi non debet, damnum fieri potest et fides affectari potest.

Caracteristicae Electrificae

Symbolum	Parametrum	Typ.	Max.	Unitas	Conditiones Probationis	Nota
VF	Voltium Progressivum	1.48	1.7	V	SI = 10 A TJ =25°C	Fig. 1
		2.0	3.0		SI = 10 A TJ =175°C
IR	Contrarius Fluctus	1	100	μA	VR = 1200 V TJ =25°C	Fig. 2
		10	250		VR = 1200 V TJ =175°C
C	Capacitas Totalis	575		pF	VR = 1 V, TJ = 25°C, f = 1 MHz	Fig. 3
		59			VR = 400 V, TJ = 25˚C, f = 1 MHz
		42.5			VR = 800 V, TJ = 25˚C, f = 1 MHz
QC	Tota Capillitas Charge	62		nC	VR = 800 V, TJ = 25°C, Qc = C(v)dv	Fig. 4
EC	Capacitatis Conservata Energeia	16.8		μJ	VR = 800 V, TJ = 25°C, Ec = C(v) ⋅vdv	Fig. 5