SiC SBD

1200V 40A Automotivus SiC Schottky Diodes

Introductio

Locus Originis:	Zhejiang
Nomen Notae:	Inventchip Technologia
Numerus Moduli:	IV1D12040U3Z
Certificatio:	AEC-Q101 qualificationem adeptus

Minimumpacking Quantitas:	450PCS
Pretium:
Packaging Details:
Tempus traditionis:
Termini solucionis:
Capacitas Supplicandi:

Caracteres

Temperatura Maxima Junction 175°C
Alta Capacitas Surge Current
Nullus Reverse Recovery Current
Nullum Forward Recovery Voltage
Summus Frequency Operatio
Comportamentum commutationis independens a temperatura
Positiva Coefficiente Temperaturae in VF
AEC-Q101 qualificationem adeptus

Applications

Automotivae Inversores Diodes Rotantis Libere
EV Charger Piles
Vindobona 3-Phasae PFC
Vis Solaris Incrementum
Alimenta per commutationem

Contornus

Diagramma Notationis

Censurae Summae Absolutae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor	Unitas
VRRM	Tensionis inversio (acme repetitiva)	1200	V
VDC	Tensio continens DC	1200	V
Si	Currit prorsus (continuus) @Tc=25°C	54*	A
	Currit prorsus (continuus) @Tc=135°C	28*	A
	Curriculum progressivum (continuum) @Tc=151°C	20*	A
IFSM	Curriculum progressivum surgens semisinus non repetitivus @Tc=25°C tp=10ms	140*	A
IFRM	Curriculum progressivum surgens repetitivum (Freq=0.1Hz, 100cycles) semisinus @Tamb =25°C tp=10ms	115*	A
PTOT	Totalis dissipatio potentiae @ Tc=25°C	272*	W
	Totalis dissipatio potentiae @ Tc=150°C	45*
	I2t valor @Tc=25°C tp=10ms	98*	A2s
Tstg	Temperatura recondita spatium	-55 ad 175	°C
TJ	Ambitus operationis temperatura junction	-55 ad 175	°C

*Per Crus

Stress superiores his quae in tabula Maximum Ratings enumerantur possunt dispositive damnum inferre. Si ullo modo horum limitum excessio fuerit, dispositive

functionalitas praesumenda non est, damnum fieri potest et fides affecta esse potest.

Caracteristicae Electrificae

Symbolum	Parametrum	Typ.	Max.	Unitas	Conditiones Probationis	Nota
VF	Voltium Progressivum	1.48*	1.8*	V	IF = 20 A TJ =25°C	Fig. 1
		2.1*	3.0*		IF = 20 A TJ =175°C
IR	Contrarius Fluctus	10*	200*	μA	VR = 1200 V TJ =25°C	Fig. 2
		45*	800*		VR = 1200 V TJ =175°C
C	Capacitas Totalis	1114*		pF	VR = 1 V, TJ = 25°C, f = 1 MHz	Fig. 3
		100*			VR = 400 V, TJ = 25˚C, f = 1 MHz
		77*			VR = 800 V, TJ = 25˚C, f = 1 MHz
QC	Tota Capillitas Charge	107*		nC	VR = 800 V, TJ = 25°C, Qc = C(v)dv	Fig. 4
EC	Capacitatis Conservata Energeia	31*		μJ	VR = 800 V, TJ = 25°C, Ec = C(v) ⋅vdv	Fig. 5