1200V 40mΩ Generatio 2 Automotiva SiC MOSFET

Proprietates

Usus

Contornus:

Diagramma Notationis:

Censurae Summae Absolutae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor	Unitas	Conditiones Probationis	Nota
VDS	Tensio a Dreno ad Fontem	1200	V	VGS =0V, ID =100μA
VGSmax (Transitorium)	Tensio transitoria maxima	-10 ad 23	V	Cyclus officii<1%, et latitudo impulsi<200ns
VGSon	Tollenda voltio commendata	15 ad 18	V
VGSoff	Demissa voltio commendata	-5 ad -2	V	Typicum -3.5V
ID	Continua amperitas (continua)	65	A	VGS =18V, TC =25°C	Fig. 23
ID	Continua amperitas (continua)	48	A	VGS =18V, TC =100°C	Fig. 23
IDM	Iusus (pulsatus)	162	A	Largor pulsus limitatur per SOA et dynamic Rθ(J-C)	Fig. 25, 26
ISM	Iusus diodae corporis (pulsatus)	162	A	Largor pulsus limitatur per SOA et dynamic Rθ(J-C)	Fig. 25, 26
PTOT	Totalis dissipatio potentiae	375	W	TC = 25°C	Fig. 24
Tstg	Temperatura recondita spatium	-55 ad 175	°C
TJ	Temperatura operationis junctionis	-55 ad 175	°C
TL	Temperatura soldering	260	°C	soldering undoso tantum permittitur ad leads, 1.6mm a case pro 10 s

Data Thermica

Symbolum	Parametrum	Valor	Unitas	Nota
Rθ(J-C)	Resistentia Thermica ab Iunctura ad Cistellam	0.4	°C\/W	Fig. 25

Caracteristica Electrica (TC =25。C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
Symbolum	Parametrum	Min.	Typ.	Max.	Unitas	Conditiones Probationis	Nota
IDSS	Drain Currentus cum voltatibus nullis in porta		5	100	μA	VDS =1200V, VGS =0V
IGSS	Fluxus per gate			±100	nA	VDS =0V, VGS = -5~20V
VTH	Voltages limen gate	1.8	2.8	4.5	V	VGS =VDS , ID =9mA	Fig. 8, 9
VTH	Voltages limen gate		2.1			VGS =VDS , ID =9mA @ TJ =175。C	Fig. 8, 9
RON	Statis resistentia dren-sorsus on		40	52	mΩ	VGS =18V, ID =20A @TJ =25. C	Fig. 4, 5, 6, 7
			75		mΩ	VGS =18V, ID =20A @TJ =175. C
			50	65	mΩ	VGS =15V, ID =20A @TJ =25. C
			80		mΩ	VGS =15V, ID =20A @TJ =175. C
Ciss	Capacitas input		2160		pF	VDS=800V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Capacitas exitus		100		pF
Crss	Capacitas translatio inversa		5.8		pF
Eoss	Energia conservata Coss		40		μJ		Fig. 17
Qg	Summa accusatio portae		110		nC	VDS =800V, ID =30A, VGS =-3 ad 18V	Fig. 18
Qgs	Facies-fontis accusatio		25		nC
Qgd	Facies-defluxus accusatio		59		nC
Rg	Resistentia input fontis		2.1		ω	f=1MHz
EON	Energia commutationis ad incendum		446.3		μJ	VDS =800V, ID =30A, VGS =-3.5 usque ad 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C	Fig. 19, 20
EOFF	Energia commutationis ad exstinguendum		70.0		μJ
td(on)	Tempus morae ad incendum		9.6		nS
tr	Tempus surgens		22.1
td(off)	Tempus morae praestinatio		19.3
tF	Tempus decidendi		10.5
EON	Energia commutationis ad incendum		644.4		μJ	VDS =800V, ID =30A, VGS =-3.5 ad 18V, RG(ext) =3.3Ω, L=200μH TJ =175。C	Fig. 22
EOFF	Energia commutationis ad exstinguendum		73.8		μJ		Fig. 22

Caracteristica Diodi Inversi (TC =25。C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
Symbolum	Parametrum	Min.	Typ.	Max.	Unitas	Conditiones Probationis	Nota
VSD	Voltium directum diodis		4.2		V	ISD =20A, VGS =0V	Fig. 10, 11, 12
VSD	Voltium directum diodis		4.0		V	ISD =20A, VGS =0V, TJ =175。C	Fig. 10, 11, 12
Est	Currus directus diodis (continuus)			63	A	VGS =-2V, TC =25. C
Est	Currus directus diodis (continuus)			36	A	VGS =-2V, TC=100. C
trr	Tempus recuperationis inversae		42.0		nS	VGS=-3.5V/+18V, ISD =30A, VR =800V, RG(ext) =10Ω L=200μH di/dt=3000A/μs
Qrr	Electritas recuperationis inversae		198.1		nC
IRRM	Summa currentis recuperationis inversae		17.4		A