1700V 1000mΩ SiC MOSFET Solaris Inversores

Locus Originis:	Zhejiang
Nomen Notae:	Inventchip Technologia
Numerus Moduli:	IV2Q171R0D7Z
Certificatio:	AEC-Q101 qualificationem adeptus

Caracteres

• secunda generatio technologiae SiC MOSFET cum +15~+18V impulso portae

• Alta voltio clausura cum bassa resistentia in statu incluso

• Celerrima commutatio cum bassa capacitatem

• capacitas operationis temperatura junctionus ad 175℃

• Velocissimum et robustum intrinsecum corpus diodum

• Kelvin porta ingressus facilior design circuity driveris

• AEC-Q101 qualificationem adeptus

Applications

• Solar inverters

• Alimenta auxiliaria

• Alimenta per commutationem

• Horologia intelligentia

Contornus:

 

Diagramma Notationis:

Censurae Summae Absolutae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor	Unitas	Conditiones Probationis	Nota
VDS	Tensio a Dreno ad Fontem	1700	V	VGS =0V, ID =10μA
VGSmax (Transitorium)	Maxima tensio spicata	-10 ad 23	V	Cyclus officii <1%, et latitudo pulsus <200ns
VGSon	Tollenda voltio commendata	15 ad 18	V
VGSoff	Demissa voltio commendata	-5 ad -2	V	Valore tipico -3.5V
ID	Continua amperitas (continua)	6.3	A	VGS =18V, TC =25°C	Fig. 23
		4.8	A	VGS =18V, TC =100°C
IDM	Iusus (pulsatus)	15.7	A	Largor pulsus limitatur per SOA et dynamic Rθ(J-C)	Fig. 25, 26
ISM	Iusus diodae corporis (pulsatus)	15.7	A	Largor pulsus limitatur per SOA et dynamic Rθ(J-C)	Fig. 25, 26
PTOT	Totalis dissipatio potentiae	73	W	TC = 25°C	Fig. 24
Tstg	Temperatura recondita spatium	-55 ad 175	°C
TJ	Temperatura operationis junctionis	-55 ad 175	°C

Data Thermica

Symbolum	Parametrum	Valor	Unitas	Nota
Rθ(J-C)	Resistentia Thermica ab Iunctura ad Cistellam	2.05	°C\/W	Fig. 25

Caracteristicae Electrificae (TC =25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
		Min.	Typ.	Max.
IDSS	Drain Currentus cum voltatibus nullis in porta		1	10	μA	VDS =1700V, VGS =0V
IGSS	Fluxus per gate			±100	nA	VDS =0V, VGS = -5~20V
VTH	Voltages limen gate	1.8	3.0	4.5	V	VGS =VDS , ID =380uA	Fig. 8, 9
			2.0		V	VGS =VDS, ID =380uA @ TJ =175°C
RON	Statis resistentia dren-sorsus on		700 1280	910	mΩ	VGS=18V, ID =1A @TJ =25°C @TJ =175°C	Fig. 4, 5, 6, 7
			950 1450	1250	mΩ	VGS=15V, ID =1A @TJ =25°C @TJ =175°C
Ciss	Capacitas input		285		pF	VDS =1000V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Capacitas exitus		15.3		pF
Crss	Capacitas translatio inversa		2.2		pF
Eoss	Energia conservata Coss		11		μJ		Fig. 17
Qg	Summa accusatio portae		16.5		nC	VDS =1000V, ID =1A, VGS =-5 ad 18V	Fig. 18
Qgs	Facies-fontis accusatio		2.7		nC
Qgd	Facies-defluxus accusatio		12.5		nC
Rg	Resistentia input fontis		13		ω	f=1MHz
EON	Energia commutationis ad incendum		51.0		μJ	VDS =1000V, ID =2A, VGS =-3.5V usque 18V, RG(ext) =10Ω, L=2330μH Tj=25°C	Fig. 19, 20
EOFF	Energia commutationis ad exstinguendum		17.0		μJ
td(on)	Tempus morae ad incendum		4.8		nS
tr	Tempus surgens		13.2
td(off)	Tempus morae praestinatio		12.0
tF	Tempus decidendi		66.8
EON	Energia commutationis ad incendum		90.3		μJ	VDS =1000V, ID =2A, VGS =-3.5V ad 18V, RG(ext) =10Ω, L=2330μH Tj=175°C	Fig. 22

Caracteristica Diodi Inversi (TC =25. C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
		Min.	Typ.	Max.
VSD	Voltium directum diodis		4.0		V	ISD =1A, VGS =0V	Fig. 10, 11, 12
			3.8		V	ISD =1A, VGS =0V, TJ =175. C
Est	Currus directus diodis (continuus)			11.8	A	VGS =-2V, TC =25. C
				6.8	A	VGS =-2V, TC=100. C
trr	Tempus recuperationis inversae		20.6		nS	VGS=-3.5V/+18V, ISD =2A, VR =1000V, RG(ext)=10Ω L=2330μ H di/dt=5000A/μs
Qrr	Electritas recuperationis inversae		54.2		nC
IRRM	Summa currentis recuperationis inversae		8.2		A

Typica Efficientia (curvae)

 

Sarcina Dimensiones

Nota:

1. Referentia Plicis: JEDEC TO263, Variatio AD

2. Omnes Dimensiones sunt in mm

3. Praeceptum mutari sine nuntio