650V 25mΩ Generatio 2 Automotiva SiC MOSFET

Caracteres

Applications

Contornus:

Diagramma Notationis:

Censurae Summae Absolutae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor	Unitas	Conditiones Probationis	Nota
VDS	Tensio a Dreno ad Fontem	650	V	VGS =0V, ID =100μA
VGSmax (DC)	Maxima tensio DC	-5 ad 20	V	Statio (DC)
VGSmax (Pulsus)	Maxima tensio spicata	-10 ad 23	V	Cyclus officii<1%, et latitudo impulsi<200ns
VGSon	Tollenda voltio commendata	18±0.5	V
VGSoff	Demissa voltio commendata	-3.5 ad -2	V
ID	Continua amperitas (continua)	99	A	VGS =18V, TC =25°C	Fig. 23
		72	A	VGS =18V, TC =100°C
IDM	Iusus (pulsatus)	247	A	Largor pulsus limitatur per SOA	Fig. 26
PTOT	Totalis dissipatio potentiae	454	W	TC = 25°C	Fig. 24
Tstg	Temperatura recondita spatium	-55 ad 175	°C
TJ	Temperatura operationis junctionis	-55 ad 175	°C
TL	Temperatura soldering	260	°C	soldering undoso tantum permittitur ad leads, 1.6mm a case pro 10 s

Data Thermica

Symbolum	Parametrum	Valor	Unitas	Nota
Rθ(J-C)	Resistentia Thermica ab Iunctura ad Cistellam	0.33	°C\/W	Fig. 25

Caracteristicae Electrificae (TC =25. C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
Symbolum	Parametrum	Min.	Typ.	Max.	Unitas	Conditiones Probationis	Nota
IDSS	Drain Currentus cum voltatibus nullis in porta		3	100	μA	VDS =650V, VGS =0V
IGSS	Fluxus per gate			±100	nA	VDS =0V, VGS = -5~20V
VTH	Voltages limen gate	1.8	2.8	4.5	V	VGS=VDS , ID =12mA	Fig. 8, 9
VTH	Voltages limen gate		2.0			VGS=VDS , ID =12mA @ TJ =175。C	Fig. 8, 9
RON	Stans resistere fontem-drainum cum accendit		25	33	mΩ	VGS =18V, ID =40A @TJ =25。C	Fig. 4, 5, 6, 7
RON	Stans resistere fontem-drainum cum accendit		38		mΩ	VGS =18V, ID =40A @TJ =175. C	Fig. 4, 5, 6, 7
Ciss	Capacitas input		3090		pF	VDS=600V, VGS =0V, f=1MHz, VAC=25mV	Fig. 16
Coss	Capacitas exitus		251		pF
Crss	Capacitas translatio inversa		19		pF
Eoss	Energia conservata Coss		52		μJ		Fig. 17
Qg	Summa accusatio portae		125		nC	VDS =400V, ID =40A, VGS =-3 ad 18V	Fig. 18
Qgs	Facies-fontis accusatio		35.7		nC
Qgd	Facies-defluxus accusatio		38.5		nC
Rg	Resistentia input fontis		1.5		ω	f=1MHz
EON	Energia commutationis ad incendum		218.8		μJ	VDS =400V, ID =40A, VGS =-3.5 ad 18V, RG(ext) =3.3Ω, L=200μH TJ =25。C	Fig. 19, 20
EOFF	Energia commutationis ad exstinguendum		95.0		μJ
td(on)	Tempus morae ad incendum		12.9		nS
tr	Tempus surgens		26.5
td(off)	Tempus morae praestinatio		23.2
tF	Tempus decidendi		11.7
EON	Energia commutationis ad incendum		248.5		μJ	VDS =400V, ID =40A, VGS =-3.5 ad 18V, RG(ext) =3.3Ω, L=200μH TJ =175。C	Fig. 22
EOFF	Energia commutationis ad exstinguendum		99.7		μJ		Fig. 22

Caracteristica Diodi Inversi (TC =25. C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
Symbolum	Parametrum	Min.	Typ.	Max.	Unitas	Conditiones Probationis	Nota
VSD	Voltium directum diodis		3.7		V	ISD =20A, VGS =0V	Fig. 10, 11, 12
VSD	Voltium directum diodis		3.5		V	ISD =20A, VGS =0V, TJ =175。C	Fig. 10, 11, 12
trr	Tempus recuperationis inversae		32		nS	VGS =-3.5V/+18V, ISD =40A, VR =400V, RG(ext) =7.5Ω L=200μH di/dt=3000A/μs
Qrr	Electritas recuperationis inversae		195.3		nC
IRRM	Summa currentis recuperationis inversae		20.2		A