IV1B12013HA1L – 1200V 13mohm SiC MODULUS Solar

Locus Originis:	Zhejiang
Nomen Notae:	Inventchip Technologia
Numerus Moduli:	IV1B12013HA1L
Certificatio:	AEC-Q101

Caracteres

• Alta voltio clausura cum bassa resistentia in statu incluso

• Celerrima commutatio cum bassa capacitatem

• Capax altus temperatura iunctio operationis

• Perexcellenter celer et robustus intrinsecus corpus diodae

Applications

• Solaris Applications

• Ups ratio

• Motore drivers

• Conversores DC/DC alti voltatūs

Sarcina

Diagramma Notationis

Censurae Summae Absolutae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor	Unitas	Conditiones Probationis	Nota
VDS	Tensio a Dreno ad Fontem	1200	V
VGSmax (DC)	Maxima tensio DC	-5 ad 22	V	Statio (DC)
VGSmax (Pulsus)	Maxima tensio spicata	-10 ad 25	V	<1% cyclus operis, et latitudo pulsus<200ns
VGSon	Recomendāta vōltagō ad incendum	20±0.5	V
VGSoff	Recomendāta vōltagō ad exstinguendum	-3.5 ad -2	V
ID	Continua amperitas (continua)	96	A	VGS =20V, Th =50°C, Tvj≤150℃
		102	A	VGS =20V, Th =50°C, Tvj≤175℃
IDM	Iusus (pulsatus)	204	A	Largor pulsus limitatur per SOA	Fig.26
PTOT	Totalis dissipatio potentiae	210	W	Tvj≤150℃	Fig.24
Tstg	Temperatura recondita spatium	-40 ad 150	°C
TJ	Maxima temperatura virtualis iunctionis sub conditionibus commutationis	-40 ad 150	°C	Operatio
		-55 ad 175	°C	Intermissiva cum vita minuita

Data Thermica

Symbolum	Parametrum	Valor	Unitas	Nota
Rθ(J-H)	Resistentia Thermal ab Junction ad Heatsink	0.596	°C\/W	Fig.25

Caracteristicae Electrificae (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
		Min.	Typ.	Max.
IDSS	Drain Currentus cum voltatibus nullis in porta		10	200	μA	VDS =1200V, VGS =0V
IGSS	Fluxus per gate			±200	nA	VDS =0V, VGS = -5~20V
VTH	Voltages limen gate	1.8	3.2	5	V	VGS=VDS , ID =24mA	Fig.9
			2.3			VGS=VDS , ID =24mA @ TC =150。C
RON	Stans resistere fontem-drainum cum accendit		12.5	16.3	mΩ	VGS =20V, ID =80A @TJ =25。C	Fig.4-7
			18		mΩ	VGS =20V, ID =80A @TJ =150。C
Ciss	Capacitas input		11		nF	VDS=800V, VGS =0V, f=100kHZ , VAC =25mV	Fig.16
Coss	Capacitas exitus		507		pF
Crss	Capacitas translatio inversa		31		pF
Eoss	Energia conservata Coss		203		μJ		Fig.17
Qg	Summa accusatio portae		480		nC	VDS =800V, ID =80A, VGS =-5 ad 20V	Fig.18
Qgs	Facies-fontis accusatio		100		nC
Qgd	Facies-defluxus accusatio		192		nC
Rg	Resistentia input fontis		1.0		ω	f=100kHZ
EON	Energia commutationis ad incendum		783		μJ	VDS =600V, ID =60A, VGS=-5 ad 20V, RG(ext)ae/ RG(ext)off =2.5Ω/1.43Ω, L=120μH	Fig.19-22
EOFF	Energia commutationis ad exstinguendum		182		μJ
td(on)	Tempus morae ad incendum		30		nS
tr	Tempus surgens		5.9
td(off)	Tempus morae praestinatio		37
tF	Tempus decidendi		21
LsCE	Inductio erratica		7.6		nH

Caracteristica Diodi Inversi (TC=25°C nisi aliter specificatum)

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
		Min.	Typ.	Max.
VSD	Voltium directum diodis		4.9		V	ISD =80A, VGS =0V	Fig.10- 12
			4.5		V	ISD =80A, VGS =0V, TJ =150°C
trr	Tempus recuperationis inversae		17.4		nS	VGS =-5V/+20V, ISD =60A, VR =600V, di/dt=13.28A/ns, RG(ext) =2.5Ω, L=120μH
Qrr	Electritas recuperationis inversae		1095		nC
IRRM	Summa currentis recuperationis inversae		114		A

Caracteristica Thermistoris NTC

Symbolum	Parametrum	Valor			Unitas	Conditiones Probationis	Nota
		Min.	Typ.	Max.
RNTC	Resistentia Notanda		5		kΩ	TNTC = 25℃	Fig.27
δR/R	Tolerantia Resistentiae ad 25℃	-5		5	%
β25/50	Valorem Beta		3380		K	±1%
Pmax	Dispergo Potentiam		5		mW

Typica Efficientia (curvae)

         

Dimensiones Pacchii (mm)