IV1B12013HA1L – 1200V 13mohm SiC MODULE Solar

Place of Origin:	Zhejiang
Brand Name:	Inventchip Technology
Model Number:	IV1B12013HA1L
Certification:	AEC-Q101

Features

• High blocking voltage with low on-resistance

• High speed switching with low capacitance

• High operating junction temperature capability

• Very fast and robust intrinsic body diode

Applications

• Solar applications

• UPS system

• Motor drivers

• High voltage DC/DC converters

Package

Marking Diagram

Absolute Maximum Ratings(TC=25°C unless otherwise specified)

Symbol	Parameter	Value	Unit	Test Conditions	Note
VDS	Drain-Source voltage	1200	V
VGSmax (DC)	Maximum DC voltage	-5 to 22	V	Static (DC)
VGSmax (Spike)	Maximum spike voltage	-10 to 25	V	<1% duty cycle, and pulse width<200ns
VGSon	Recommended turn -on voltage	20±0.5	V
VGSoff	Recommended turn -off voltage	-3.5 to -2	V
ID	Drain current (continuous)	96	A	VGS =20V, Th =50°C, Tvj≤150℃
		102	A	VGS =20V, Th =50°C, Tvj≤175℃
IDM	Drain current (pulsed)	204	A	Pulse width limited by SOA	Fig.26
PTOT	Total power dissipation	210	W	Tvj≤150℃	Fig.24
Tstg	Storage temperature range	-40 to 150	°C
TJ	Maximum virtual junction temperature under switching conditions	-40 to 150	°C	Operation
		-55 to 175	°C	Intermittent with reduced life

Thermal Data

Symbol	Parameter	Value	Unit	Note
Rθ(J-H)	Thermal Resistance from Junction to Heatsink	0.596	°C/W	Fig.25

Electrical Characteristics(TC=25°C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
IDSS	Zero gate voltage drain current		10	200	μA	VDS =1200V, VGS =0V
IGSS	Gate leakage current			±200	nA	VDS =0V, VGS = -5~20V
VTH	Gate threshold voltage	1.8	3.2	5	V	VGS=VDS , ID =24mA	Fig.9
			2.3			VGS=VDS , ID =24mA @ TC =150。C
RON	Static drain-source on- resistance		12.5	16.3	mΩ	VGS =20V, ID =80A @TJ =25。C	Fig.4-7
			18		mΩ	VGS =20V, ID =80A @TJ =150。C
Ciss	Input capacitance		11		nF	VDS=800V, VGS =0V, f=100kHZ , VAC =25mV	Fig.16
Coss	Output capacitance		507		pF
Crss	Reverse transfer capacitance		31		pF
Eoss	Coss  stored energy		203		μJ		Fig.17
Qg	Total gate charge		480		nC	VDS =800V, ID =80A, VGS =-5 to 20V	Fig.18
Qgs	Gate-source charge		100		nC
Qgd	Gate-drain charge		192		nC
Rg	Gate input resistance		1.0		Ω	f=100kHZ
EON	Turn-on switching energy		783		μJ	VDS =600V, ID =60A, VGS=-5 to 20V, RG(ext)on/ RG(ext)off =2.5Ω/1.43Ω, L=120μH	Fig.19-22
EOFF	Turn-off switching energy		182		μJ
td(on)	Turn-on delay time		30		ns
tr	Rise time		5.9
td(off)	Turn-off delay time		37
tf	Fall time		21
LsCE	Stray inductance		7.6		nH

Reverse Diode Characteristics(TC=25°C unless otherwise specified)

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
VSD	Diode forward voltage		4.9		V	ISD =80A, VGS =0V	Fig.10- 12
			4.5		V	ISD =80A, VGS =0V, TJ =150°C
trr	Reverse recovery time		17.4		ns	VGS =-5V/+20V, ISD =60A, VR =600V, di/dt=13.28A/ns, RG(ext) =2.5Ω, L=120μH
Qrr	Reverse recovery charge		1095		nC
IRRM	Peak reverse recovery current		114		A

NTC Thermistor Characteristics

Symbol	Parameter	Value			Unit	Test Conditions	Note
		Min.	Typ.	Max.
RNTC	Rated Resistance		5		kΩ	TNTC =25℃	Fig.27
ΔR/R	Resistance Tolerance at 25℃	-5		5	%
β25/50	Beta Value		3380		K	±1%
Pmax	Power Dissipation		5		mW

Typical Performance (curves)

         

Package Dimensions (mm)